reacting gas

Single crystal silicon slice as target, Ar and O_2 respectively as sputtering and reacting gas, a silicon oxides ( SiO_x) film was deposited on Al substrate by reactive magnetron sputtering.

以单晶硅片为靶材，高纯Ar和O2分别为溅射气体和反应气体，采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。

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CO_2 sequestration by mineral carbonation, namely greenhouse gas CO_2 reacting with non-carbonate minerals to form geologically stable mineral carbonates, such as CaCO_3, MgCO_3, is a new technology for the reduction of carbon dioxide emissions to the atmosphere.

将温室气体CO2以碳酸盐（如CaCO3、MgCO3）的固体形式永久储存起来，即CO2矿物碳酸化固定，是减少大气中CO2含量，解除温室效应的一种全新方法。

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The probability density functions ( PDF) for the gas axial and tangential velocities at each measuring location are obtained from the measured data of the instantaneous gas velocity. The results delineate the turbulent fluctuating properties of the reacting flow field.

通过瞬时速度场的测量结果，获得了燃烧室内各测点上气体轴向与切向瞬时速度的概率密度函数（PDF），揭示了热态速度场的湍流脉动特性。

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To deal with the rapid pyrolysis mechanism of hemicellulose, the effects of reacting temperature and carrier gas flow on hemicellulose pyrolysis was studied.

为了了解半纤维素的快速热解机理，研究了反应温度和载气体积流量对半纤维量的热解影响。

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TiN thin film with ( 002) preferred orientation was grown by the DC magnetron sputtering at the condition of pure N_2 reacting gas, 1.6 A of the current of DC sputtering and 500 ℃ of the substrate temperature.

应用直流磁控溅射方法，在500℃的衬底温度、纯氮气的溅射气体、800w溅射功率的条件下制备出（002）择优取向的TiN薄膜。

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In this thesis, numerical simulations of three-dimensional turbulent reacting flow in gas turbine combustor were studied.

本文针对含有强旋流的燃气轮机燃烧室三维湍流反应流的数值模拟问题进行了研究。

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The gas entrainment controls the mixing rate of the jet fluid with the ambient fluid and affects the development of the flame and the residence time of reacting gas in a reaction system and the overall chemical reaction.

在燃烧过程中，射流的引射制约着射流流体与周围环境气体的掺混过程，从而影响火焰的发展及化学反应的持续时间。

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Effect of Reacting Gas Admission Way on HFCVD Diamond Films

进气方式对热丝CVD制备金刚石薄膜的影响

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Chemical ion source, reacting gas, CH4,20%;

负化学源；反应气：甲烷，20%；

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In this paper, a two fluid trajectory ( continuum trajectory, CT) model ( Eulerian Eulerian Lagrangian) is used for simulating turbulent reacting gas particle flows and coal combustion in a tangentially fired furnace.

本文采用双流体轨道模型（颗粒相连续介质轨道模型）对一个四角喷燃模型炉内三维湍流两相流动及煤粉燃烧进行了模拟。

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The necessity of humidification treatment for reacting gas of the proton exchange film fuel cells is dissertated.

阐述了对质子交换膜燃料电池反应气体进行加湿处理的必要性。

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Analysis of the instability of a reacting gas jet submerged in a liquid

浸没于液体中有化学反应的射流的不稳定性分析

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The photoelectric property and thermoelectromotive force of CdIn_2O_4 or CIO thin film deposited by way of DC reactive magnetron sputtering process were investigated, as well as the effects of the O_2 concentration in reacting gas and annealing process on the property of CIO films.

研究了直流磁控反应溅射制备三元化合物CdIn2O4薄膜（简称CIO膜）的光电性质和温差电动势，及其反应气体中氧浓度和退火处理对CIO膜性质的影响。

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The optimum reacting temperature and reducing gas flux is found by experiments.

研究出了适宜的反应温度和还原气体流量范围；

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